Infineon FF2400R12IP7PBPSA1 Half Bridge IGBT, 2.4 kA 1200 V, Screw Mount
- RS 제품 번호:
- 349-363
- 제조사 부품 번호:
- FF2400R12IP7PBPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩2,325,659.64
재고있음
- 추가로 2025년 12월 29일 부터 3 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩2,325,659.64 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-363
- 제조사 부품 번호:
- FF2400R12IP7PBPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 2.4 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 20 mW | |
| Configuration | Half Bridge | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 2.4 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 3+ Dual IGBT Module with TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, and NTC is designed for high power applications, offering exceptional performance and reliability. It features the highest power density, enabling efficient operation in compact spaces. With best-in-class VCEsat, the module ensures low saturation voltage, improving overall efficiency and reducing power losses.
Increase in power density
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
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