Infineon FF2400R12IP7BPSA1, Type N-Channel Half Bridge IGBT, 2400 A 1200 V Module, Screw
- RS 제품 번호:
- 349-362
- 제조사 부품 번호:
- FF2400R12IP7BPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩2,198,396.80
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 + | ₩2,198,396.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-362
- 제조사 부품 번호:
- FF2400R12IP7BPSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 2400A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Half Bridge | |
| Package Type | Module | |
| Mount Type | Screw | |
| Channel Type | Type N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 247mm | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Height | 38.25mm | |
| Width | 89 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 2400A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Half Bridge | ||
Package Type Module | ||
Mount Type Screw | ||
Channel Type Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 247mm | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Height 38.25mm | ||
Width 89 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 3+ Dual IGBT Module with TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, and NTC is designed for ultra-high power applications, providing superior performance and efficiency. It offers the highest power density, optimizing both space and power handling for demanding industrial uses. The module features best-in-class VCEsat, delivering low saturation voltage to maximize efficiency and minimize energy losses.
Increase in power density
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
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