제조사부품번호

Infineon FF1600R12IP7BOSA1, Type N-Channel Half Bridge IGBT, 1600 A 1200 V PrimePACKTM2, Screw

RS 제품 번호:: 349-361
제조사 부품 번호:: FF1600R12IP7BOSA1
제조업체:: Infineon

Infineon FF1600R12IP7BOSA1, Type N-Channel Half Bridge IGBT, 1600 A 1200 V PrimePACKTM2, Screw

Subtotal (1 unit)*

₩1,475,217.20

재고있음

추가로 2026년 3월 09일 부터 3 개 단위 배송

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-361
제조사 부품 번호:: FF1600R12IP7BOSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	1600A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	20mW
	Number of Transistors	2
	Package Type	PrimePACKTM2
	Configuration	Half Bridge
	Mount Type	Screw
	Channel Type	Type N
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.85V
	Maximum Operating Temperature	175°C
	Width	37.7 mm
	Standards/Approvals	IEC 60749, IEC 60068, IEC 60747
	Length	89mm
	Height	36.5mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 1600A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 20mW
	Number of Transistors 2
	Package Type PrimePACKTM2
	Configuration Half Bridge
	Mount Type Screw
	Channel Type Type N
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
	Maximum Operating Temperature 175°C
	Width 37.7 mm
	Standards/Approvals IEC 60749, IEC 60068, IEC 60747
	Length 89mm
	Height 36.5mm
	Automotive Standard No

Datasheet - FF1600R12IP7BOSA1

COO (Country of Origin):: DE

The Infineon PrimePACK 2 1200 V 1600 A Dual IGBT Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode is designed for high power applications, offering exceptional performance in a compact and robust package. It delivers the highest power density, optimizing space while maintaining outstanding power handling capabilities. The module features best-in-class VCEsat, ensuring low saturation voltage for higher efficiency and reduced energy losses.

Increase in power density

Less cooling effort for same output power

Higher inverter output current

Avoidance of paralleling of IGBT modules

Standardized housing

Infineon FF1600R12IP7BOSA1, Type N-Channel Half Bridge IGBT, 1600 A 1200 V PrimePACKTM2, Screw

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