제조사부품번호

Infineon 2 MB SPI FRAM 8-Pin DFN

RS 제품 번호:: 188-5422
제조사 부품 번호:: FM25V20A-DG
제조업체:: Infineon

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대량 구매 할인 기용 가능

Subtotal (1 tube of 74 units)*

₩2,219,381.36

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	Per Tube*
74 - 74	₩29,991.64	₩2,219,394.52
148 - 222	₩29,391.92	₩2,175,030.28
296 +	₩28,510.20	₩2,109,767.96

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-5422
제조사 부품 번호:: FM25V20A-DG
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	FRAM
	Memory Size	2MB
	Organisation	256k x 8 Bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Maximum Clock Frequency	40MHz
	Mount Type	Surface
	Package Type	DFN
	Pin Count	8
	Length	4.5mm
	Standards/Approvals	No
	Width	4 mm
	Height	0.75mm
	Maximum Operating Temperature	85°C
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2V
	Number of Words	256K
	Minimum Operating Temperature	-40°C
	Number of Bits per Word	8
	Automotive Standard	AEC-Q100

	모두 선택
	브랜드 Infineon
	Product Type FRAM
	Memory Size 2MB
	Organisation 256k x 8 Bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Maximum Clock Frequency 40MHz
	Mount Type Surface
	Package Type DFN
	Pin Count 8
	Length 4.5mm
	Standards/Approvals No
	Width 4 mm
	Height 0.75mm
	Maximum Operating Temperature 85°C
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2V
	Number of Words 256K
	Minimum Operating Temperature -40°C
	Number of Bits per Word 8
	Automotive Standard AEC-Q100

Datasheet FM25V20A-DG

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 2 MB SPI FRAM 8-Pin DFN

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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