제조사부품번호

Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DG

RS 제품 번호:: 124-2989
제조사 부품 번호:: FM25V20A-DG
제조업체:: Infineon

Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DG

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩29,986.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당
1 - 18	₩29,986.00
19 - 36	₩29,384.40
37 +	₩28,801.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 124-2989
제조사 부품 번호:: FM25V20A-DG
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	FRAM
	Memory Size	2MB
	Organisation	256k x 8 Bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mount Type	Surface
	Maximum Clock Frequency	40MHz
	Package Type	DFN
	Pin Count	8
	Length	4.5mm
	Height	0.75mm
	Width	4 mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Minimum Supply Voltage	2V
	Minimum Operating Temperature	-40°C
	Number of Bits per Word	8
	Automotive Standard	AEC-Q100
	Maximum Supply Voltage	3.6V
	Number of Words	256K

	모두 선택
	브랜드 Infineon
	Product Type FRAM
	Memory Size 2MB
	Organisation 256k x 8 Bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mount Type Surface
	Maximum Clock Frequency 40MHz
	Package Type DFN
	Pin Count 8
	Length 4.5mm
	Height 0.75mm
	Width 4 mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Minimum Supply Voltage 2V
	Minimum Operating Temperature -40°C
	Number of Bits per Word 8
	Automotive Standard AEC-Q100
	Maximum Supply Voltage 3.6V
	Number of Words 256K

Data Sheet - FM25V20A-DG

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DG

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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