Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G
- RS 제품 번호:
- 124-2988
- 제조사 부품 번호:
- FM25V10-G
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
가격 개당**
₩18,204.04
153 재고있음 5-9영업일내 홍콩 발송*
* 배송 날짜는 선택한 수량과 배송 주소에 따라 달라질 수 있습니다.
재고 확인하기
수량 | 한팩당 |
---|---|
1 - 24 | ₩18,204.04 |
25 - 48 | ₩17,803.60 |
49 + | ₩17,423.84 |
** 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 124-2988
- 제조사 부품 번호:
- FM25V10-G
- 제조업체:
- Infineon
Infineon Fram Memory, 1Mbit Memory size, 128K x 8 Bit Organisation - FM25V10-G
This FRAM memory is designed for high-speed data storage solutions, featuring a memory size of 1 Mbit, organised as 128K x 8 bits. Using surface mount technology, it facilitates easy integration into various electronic systems. The compact dimensions measure 4.97mm x 3.98mm x 1.47mm, providing versatility for space-sensitive applications.
Features & Benefits
• Fast write operations with no delays enhance efficiency
• Supports up to 40MHz SPI interface for high-speed memory access
• AEC-Q100 compliant, ensuring reliable automotive memory solutions
• Advanced write protection prevents accidental data modification
• Supports up to 40MHz SPI interface for high-speed memory access
• AEC-Q100 compliant, ensuring reliable automotive memory solutions
• Advanced write protection prevents accidental data modification
Applications
• Integrated into automotive control systems for data logging
• Utilised in industrial automation for rapid data collection
• Ideal for medical devices requiring non-volatile storage
• Deployed in consumer electronics for enhanced performance
• Used in IoT devices for reliable memory retention
• Utilised in industrial automation for rapid data collection
• Ideal for medical devices requiring non-volatile storage
• Deployed in consumer electronics for enhanced performance
• Used in IoT devices for reliable memory retention
What advantages does this memory offer for industrial applications?
The ability to perform fast write operations at bus speed ensures that data can be captured quickly in industrial settings, reducing the risk of data loss in time-sensitive scenarios. Its robust write endurance of 100 trillion cycles further supports frequent data logging.
How does its power consumption compare with traditional memory solutions?
It operates efficiently, consuming only 300μA when active and as low as 5μA in sleep mode. This low power requirement makes it ideal for battery-operated devices or applications where energy efficiency is critical.
What benefits do the built-in protection features provide?
The sophisticated write protection mechanism includes both hardware and software controls, preventing unintended writes and ensuring that critical data remains safe from accidental changes, which is essential in mission-critical systems.
For these production packs, non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
속성 | 값 |
---|---|
Memory Size | 1Mbit |
Organisation | 128K x 8 bit |
Interface Type | SPI |
Data Bus Width | 8bit |
Maximum Random Access Time | 18ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.47mm |
Length | 4.97mm |
Maximum Operating Supply Voltage | 3.6 V |
Width | 3.98mm |
Height | 1.47mm |
Maximum Operating Temperature | +85 °C |
Automotive Standard | AEC-Q100 |
Number of Words | 128K |
Minimum Operating Supply Voltage | 2 V |
Minimum Operating Temperature | -40 °C |
Number of Bits per Word | 8bit |