제조사부품번호

Infineon 256 kB SPI FRAM 8-Pin DFN

RS 제품 번호:: 188-5418
제조사 부품 번호:: FM25V02A-DG
제조업체:: Infineon

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대량 구매 할인 기용 가능

Subtotal (1 tube of 81 units)*

₩738,558.00

일시적 품절

2026년 5월 29일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
81 - 81	₩9,118.00	₩738,527.92
162 - 243	₩8,888.64	₩720,055.04
324 +	₩8,711.92	₩705,635.44

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-5418
제조사 부품 번호:: FM25V02A-DG
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	FRAM
	Memory Size	256kB
	Organisation	32K x 8 Bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mount Type	Surface
	Maximum Clock Frequency	40MHz
	Package Type	DFN
	Pin Count	8
	Width	4 mm
	Length	4.5mm
	Height	0.75mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Number of Bits per Word	8
	Number of Words	32k
	Minimum Operating Temperature	-40°C
	Automotive Standard	AEC-Q100
	Minimum Supply Voltage	2V
	Maximum Supply Voltage	3.6V

	모두 선택
	브랜드 Infineon
	Product Type FRAM
	Memory Size 256kB
	Organisation 32K x 8 Bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mount Type Surface
	Maximum Clock Frequency 40MHz
	Package Type DFN
	Pin Count 8
	Width 4 mm
	Length 4.5mm
	Height 0.75mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Number of Bits per Word 8
	Number of Words 32k
	Minimum Operating Temperature -40°C
	Automotive Standard AEC-Q100
	Minimum Supply Voltage 2V
	Maximum Supply Voltage 3.6V

Datasheet FM25V02A-DG

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 256 kB SPI FRAM 8-Pin DFN

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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