제조사부품번호

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC

RS 재고 번호:: 188-5407
제조 부품 번호:: FM24W256-G
제조업체:: Infineon

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC

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대량 구매 할인 기용 가능

Subtotal (1 tube of 97 units)*

₩711,933.44

일시적 품절

2026년 4월 02일 부터 873 개 단위 배송

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단위당	한팩당	Per Tube*
97 - 97	₩7,339.52	₩712,023.68
194 - 291	₩7,157.16	₩694,225.72
388 +	₩7,046.24	₩683,558.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 재고 번호:: 188-5407
제조 부품 번호:: FM24W256-G
제조업체:: Infineon

기술적 참조

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Memory Size	256kB
	Product Type	FRAM
	Organisation	32K x 8 Bit
	Interface Type	2 Wire I2C
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Maximum Clock Frequency	1MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Length	4.97mm
	Standards/Approvals	No
	Height	1.38mm
	Width	3.98 mm
	Maximum Operating Temperature	85°C
	Minimum Operating Temperature	-40°C
	Number of Bits per Word	8
	Minimum Supply Voltage	2.7V
	Automotive Standard	AEC-Q100
	Number of Words	32k
	Maximum Supply Voltage	5.5V

	모두 선택
	브랜드 Infineon
	Memory Size 256kB
	Product Type FRAM
	Organisation 32K x 8 Bit
	Interface Type 2 Wire I2C
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Maximum Clock Frequency 1MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Length 4.97mm
	Standards/Approvals No
	Height 1.38mm
	Width 3.98 mm
	Maximum Operating Temperature 85°C
	Minimum Operating Temperature -40°C
	Number of Bits per Word 8
	Minimum Supply Voltage 2.7V
	Automotive Standard AEC-Q100
	Number of Words 32k
	Maximum Supply Voltage 5.5V

Datasheet FM24W256-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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