제조사부품번호

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24W256-G

RS 제품 번호:: 125-4217
제조사 부품 번호:: FM24W256-G
제조업체:: Infineon

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24W256-G

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩6,993.60

재고있음

7 개 단위 배송 준비 완료
추가로 2026년 7월 02일 부터 960 개 단위 배송

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수량	한팩당
1 - 24	₩6,993.60
25 - 48	₩6,843.20
49 +	₩6,692.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 125-4217
제조사 부품 번호:: FM24W256-G
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	FRAM
	Memory Size	256kB
	Organisation	32K x 8 Bit
	Interface Type	2 Wire I2C
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Mount Type	Surface
	Maximum Clock Frequency	1MHz
	Package Type	SOIC
	Pin Count	8
	Height	1.38mm
	Length	4.97mm
	Width	3.98 mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Automotive Standard	AEC-Q100
	Number of Words	32k
	Minimum Supply Voltage	2.7V
	Number of Bits per Word	8
	Maximum Supply Voltage	5.5V
	Minimum Operating Temperature	-40°C

	모두 선택
	브랜드 Infineon
	Product Type FRAM
	Memory Size 256kB
	Organisation 32K x 8 Bit
	Interface Type 2 Wire I2C
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Mount Type Surface
	Maximum Clock Frequency 1MHz
	Package Type SOIC
	Pin Count 8
	Height 1.38mm
	Length 4.97mm
	Width 3.98 mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Automotive Standard AEC-Q100
	Number of Words 32k
	Minimum Supply Voltage 2.7V
	Number of Bits per Word 8
	Maximum Supply Voltage 5.5V
	Minimum Operating Temperature -40°C

Datasheet - FM24W256-G

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24W256-G

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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