Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM1808B-SG
- RS 제품 번호:
- 124-2981P
- 제조사 부품 번호:
- FM1808B-SG
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
가격 개당(튜브에 담겨 공급됨)**
₩17,814.16
922 <재고있음> 5-9영업일내 홍콩 발송*
* 배송 날짜는 선택한 수량과 배송 주소에 따라 달라질 수 있습니다.
수량 | 한팩당 |
---|---|
7 - 13 | ₩17,421.04 |
14 + | ₩17,047.94 |
**다른 단위에 대한 가격 표시
- RS 제품 번호:
- 124-2981P
- 제조사 부품 번호:
- FM1808B-SG
- 제조업체:
- Infineon
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 32 K x 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 15 mA (max)
Standby current 25 μA (typ)
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 32 K x 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 15 mA (max)
Standby current 25 μA (typ)
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
속성 | 값 |
---|---|
Memory Size | 256kbit |
Organisation | 32K x 8 bit |
Interface Type | Parallel |
Data Bus Width | 8bit |
Maximum Random Access Time | 70ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 28 |
Dimensions | 18.11 x 7.62 x 2.37mm |
Length | 18.11mm |
Width | 7.62mm |
Maximum Operating Supply Voltage | 5.5 V |
Height | 2.37mm |
Maximum Operating Temperature | +85 °C |
Minimum Operating Supply Voltage | 4.5 V |
Number of Bits per Word | 8bit |
Minimum Operating Temperature | -40 °C |
Automotive Standard | AEC-Q100 |
Number of Words | 32K |