Infineon 256 kB SPI FRAM 8-Pin SOIC
- RS 제품 번호:
- 188-5425
- 제조사 부품 번호:
- FM25W256-G
- 제조업체:
- Infineon
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- RS 제품 번호:
- 188-5425
- 제조사 부품 번호:
- FM25W256-G
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 256kB | |
| Product Type | FRAM | |
| Organisation | 32K x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Maximum Clock Frequency | 20MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Height | 1.38mm | |
| Width | 3.98 mm | |
| Standards/Approvals | No | |
| Length | 4.97mm | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Bits per Word | 8 | |
| Number of Words | 32k | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 256kB | ||
Product Type FRAM | ||
Organisation 32K x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Maximum Clock Frequency 20MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Height 1.38mm | ||
Width 3.98 mm | ||
Standards/Approvals No | ||
Length 4.97mm | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Bits per Word 8 | ||
Number of Words 32k | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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