Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG

모든 FRAM Memory 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩17,502.80

Add to Basket
수량 선택 또는 입력
재고있음
  • 2 개 단위 배송 준비 완료
  • 추가로 2026년 1월 01일 부터 133 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 6₩17,502.80
7 - 13₩17,108.00
14 +₩16,732.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
125-4205
제조사 부품 번호:
FM18W08-SG
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

28

Dimensions

18.11 x 7.62 x 2.37mm

Length

18.11mm

Width

7.62mm

Maximum Operating Supply Voltage

5.5 V

Height

2.37mm

Maximum Operating Temperature

+85 °C

Number of Words

32K

Number of Bits per Word

8bit

Minimum Operating Supply Voltage

2.7 V

Automotive Standard

AEC-Q100

Minimum Operating Temperature

-40 °C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

관련된 링크들