Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA
- RS 제품 번호:
- 188-2554
- 제조사 부품 번호:
- W29N01HZBINA
- 제조업체:
- Winbond
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대량 구매 할인 기용 가능
Subtotal (1 tray of 210 units)*
₩1,177,688.40
일시적 품절
- 2026년 6월 17일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 210 - 210 | ₩5,608.04 | ₩1,177,806.84 |
| 420 - 630 | ₩5,497.12 | ₩1,154,237.28 |
| 840 + | ₩5,386.20 | ₩1,131,141.48 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-2554
- 제조사 부품 번호:
- W29N01HZBINA
- 제조업체:
- Winbond
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Winbond | |
| Memory Size | 1GB | |
| Product Type | Flash Memory | |
| Interface Type | Parallel | |
| Package Type | VFBGA | |
| Pin Count | 63 | |
| Organisation | 128M x 8 Bit | |
| Mount Type | Surface | |
| Cell Type | SLC NAND | |
| Maximum Supply Voltage | 1.95V | |
| Minimum Supply Voltage | 1.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 11.1mm | |
| Standards/Approvals | No | |
| Width | 11.1 mm | |
| Height | 0.6mm | |
| Series | W29N01HZ | |
| Number of Words | 128M | |
| Automotive Standard | No | |
| Supply Current | 25mA | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 25μs | |
| 모두 선택 | ||
|---|---|---|
브랜드 Winbond | ||
Memory Size 1GB | ||
Product Type Flash Memory | ||
Interface Type Parallel | ||
Package Type VFBGA | ||
Pin Count 63 | ||
Organisation 128M x 8 Bit | ||
Mount Type Surface | ||
Cell Type SLC NAND | ||
Maximum Supply Voltage 1.95V | ||
Minimum Supply Voltage 1.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 11.1mm | ||
Standards/Approvals No | ||
Width 11.1 mm | ||
Height 0.6mm | ||
Series W29N01HZ | ||
Number of Words 128M | ||
Automotive Standard No | ||
Supply Current 25mA | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 25μs | ||
Density : 1Gbit (Single chip solution)
Vcc : 1.7V to 1.95V
Bus width : x8 x16
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command s
Additional command support
Copy Back
Lowest power consumption
Read: 13 mA(typ.)
Program/Erase:10mA(typ)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
68-ball WLCSP
1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
관련된 링크들
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