Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF
- RS 제품 번호:
- 188-2878
- 제조사 부품 번호:
- W29N04GVBIAF
- 제조업체:
- Winbond
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩24,571.60
마지막 RS 재고
- 최종적인 6 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 52 | ₩24,571.60 |
| 53 - 104 | ₩24,032.04 |
| 105 + | ₩23,516.92 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-2878
- 제조사 부품 번호:
- W29N04GVBIAF
- 제조업체:
- Winbond
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Winbond | |
| Product Type | Flash Memory | |
| Memory Size | 4GB | |
| Interface Type | Parallel | |
| Package Type | VFBGA | |
| Pin Count | 63 | |
| Organisation | 512M x 8 Bit | |
| Mount Type | Surface | |
| Cell Type | SLC NAND | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 11.1mm | |
| Height | 0.6mm | |
| Standards/Approvals | No | |
| Width | 11.1 mm | |
| Automotive Standard | No | |
| Series | W29N04GV | |
| Maximum Random Access Time | 25μs | |
| Supply Current | 35mA | |
| Number of Bits per Word | 8 | |
| Number of Words | 512M | |
| 모두 선택 | ||
|---|---|---|
브랜드 Winbond | ||
Product Type Flash Memory | ||
Memory Size 4GB | ||
Interface Type Parallel | ||
Package Type VFBGA | ||
Pin Count 63 | ||
Organisation 512M x 8 Bit | ||
Mount Type Surface | ||
Cell Type SLC NAND | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 11.1mm | ||
Height 0.6mm | ||
Standards/Approvals No | ||
Width 11.1 mm | ||
Automotive Standard No | ||
Series W29N04GV | ||
Maximum Random Access Time 25μs | ||
Supply Current 35mA | ||
Number of Bits per Word 8 | ||
Number of Words 512M | ||
Density : 4Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
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