Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAA

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포장 옵션
RS 제품 번호:
188-2808
제조사 부품 번호:
W29N02GVBIAA
제조업체:
Winbond
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모두 선택

브랜드

Winbond

Product Type

Flash Memory

Memory Size

2GB

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

256M x 8 bit

Mount Type

Surface

Cell Type

SLC NAND

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Height

0.6mm

Length

11.1mm

Width

9.1mm

Standards/Approvals

No

Number of Bits per Word

8

Supply Current

35mA

Series

W29N02GV

Number of Words

256M

Automotive Standard

No

Maximum Random Access Time

25μs

Density : 2Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 2G-bit/256M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(2)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for block Lock feature

Lowest power consumption

Read: 25mA(typ.3V)

Program/Erase: 25mA(typ.3V)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

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