Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin SOP, AS25F3128MQ-6SINTR
- RS 제품 번호:
- 338-524
- 제조사 부품 번호:
- AS25F3128MQ-6SINTR
- 제조업체:
- Alliance Memory
Subtotal (1 reel of 2000 units)*
₩4,790,240.00
일시적 품절
- 2026년 4월 06일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 + | ₩2,395.12 | ₩4,788,736.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 338-524
- 제조사 부품 번호:
- AS25F3128MQ-6SINTR
- 제조업체:
- Alliance Memory
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Alliance Memory | |
| Memory Size | 128Mbit | |
| Interface Type | Serial | |
| Package Type | SOP | |
| Pin Count | 8 | |
| Cell Type | NOR | |
| 모두 선택 | ||
|---|---|---|
브랜드 Alliance Memory | ||
Memory Size 128Mbit | ||
Interface Type Serial | ||
Package Type SOP | ||
Pin Count 8 | ||
Cell Type NOR | ||
- COO (Country of Origin):
- TW
The Alliance Memory 128M-bit interface Flash memory device designed for operating on a single power supply from 2.7 to 3.6V with current consumption as low as
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
Speed 166MHz
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8p SOP package 208mils
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8p SOP package 208mils
관련된 링크들
- Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin SOP, AS25F3128MQ-6SIN
- Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin WSON, AS25F3128MQ-6WINTR
- Alliance Memory NOR 128Mbit SPI Flash Memory 8-Pin SOP, AS25F1128MQ-70SIN
- Alliance Memory NOR 64Mbit SPI Flash Memory 8-Pin 8pin SOP, AS25F364MQ-10SIN
- Alliance Memory NOR 512Mbit Serial Flash Memory 16-Pin SOP, AS25F3512MQ-7S2INTR
- Alliance Memory NOR 256Mbit Serial Flash Memory 16-Pin SOP, AS25F3256MQ-7S2INTR
- Alliance Memory NOR 128MB Serial Flash Memory 8-Pin SOIC, AS25F1128MQ-70SINTR
- Alliance Memory NOR 64MB Serial Flash Memory 8-Pin SOIC, AS25F364MQ-10SINTR
