Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343

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RS 제품 번호:
827-5154
제조사 부품 번호:
BFP640ESDH6327XTSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current (Idc)

50 mA

Transistor Polarity

NPN

Maximum Collector Emitter Voltage (Vceo)

13 V

Pin Count

4

Package Type

SOT-343

Automotive Standard

AEC-Q101

Height

900 μm

Length

2 mm

Maximum Collector Base Voltage (VCBO)

13 V

Maximum Emitter Base Voltage (VEBO)

1.2 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

200 mW

Maximum Transition Frequency (ft)

70 GHz

Minimum DC Current Gain (hFE)

110

Minimum Operating Temperature

-65 °C

Mount Type

Surface

Series

BFP640

Standards/Approvals

Pb-Free (RoHS)

Transistor Configuration

Single

Width

2.1 mm

SiGe RF Bipolar Transistors, Infineon


A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon


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