제조사부품번호

Infineon BFP640H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343

RS 제품 번호:: 259-1442
Distrelec 제품 번호:: 304-40-488
제조사 부품 번호:: BFP640H6327XTSA1
제조업체:: Infineon

Infineon BFP640H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩13,912.00

재고있음

5,300 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
25 - 25	₩556.48	₩13,893.20
50 - 75	₩528.28	₩13,197.60
100 - 225	₩496.32	₩12,408.00
250 - 975	₩460.60	₩11,524.40
1000 +	₩424.88	₩10,603.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 259-1442
Distrelec 제품 번호:: 304-40-488
제조사 부품 번호:: BFP640H6327XTSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	RF Bipolar Transistor
	Maximum DC Collector Current Idc	50mA
	Maximum Collector Emitter Voltage Vceo	4.1V
	Package Type	SOT-343
	Mount Type	Surface
	Transistor Configuration	NPN
	Maximum Collector Base Voltage VCBO	13V
	Maximum Power Dissipation Pd	200mW
	Minimum DC Current Gain hFE	110
	Maximum Emitter Base Voltage VEBO	1.2V
	Transistor Polarity	NPN
	Minimum Operating Temperature	-55°C
	Maximum Transition Frequency ft	42GHz
	Maximum Operating Temperature	150°C
	Pin Count	4
	Height	0.9mm
	Series	BFP
	Standards/Approvals	RoHS
	Width	2.1 mm
	Length	2mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type RF Bipolar Transistor
	Maximum DC Collector Current Idc 50mA
	Maximum Collector Emitter Voltage Vceo 4.1V
	Package Type SOT-343
	Mount Type Surface
	Transistor Configuration NPN
	Maximum Collector Base Voltage VCBO 13V
	Maximum Power Dissipation Pd 200mW
	Minimum DC Current Gain hFE 110
	Maximum Emitter Base Voltage VEBO 1.2V
	Transistor Polarity NPN
	Minimum Operating Temperature -55°C
	Maximum Transition Frequency ft 42GHz
	Maximum Operating Temperature 150°C
	Pin Count 4
	Height 0.9mm
	Series BFP
	Standards/Approvals RoHS
	Width 2.1 mm
	Length 2mm
	Automotive Standard AEC-Q101

Datasheet - BFP640ESDH6327XTSA1

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

Robust high performance low noise amplifier based on Infineon's reliable

2 kV ESD robustness (HBM) due to integrated protection circuits

High maximum RF input power of 21 dBm

Infineon BFP640H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343

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