Infineon BFP640H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343
- RS 제품 번호:
- 259-1442
- Distrelec 제품 번호:
- 304-40-488
- 제조사 부품 번호:
- BFP640H6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 25 units)*
₩14,820.00
재고있음
- 추가로 2026년 6월 01일 부터 5,200 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 25 | ₩592.80 | ₩14,839.50 |
| 50 - 75 | ₩563.55 | ₩14,098.50 |
| 100 - 225 | ₩530.40 | ₩13,260.00 |
| 250 - 975 | ₩491.40 | ₩12,304.50 |
| 1000 + | ₩452.40 | ₩11,329.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 259-1442
- Distrelec 제품 번호:
- 304-40-488
- 제조사 부품 번호:
- BFP640H6327XTSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4.1V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4.1V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Robust high performance low noise amplifier based on Infineon's reliable
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
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