Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 3.25 V, 4-Pin SOT-343
- RS 제품 번호:
- 170-2366
- 제조사 부품 번호:
- BFP842ESDH6327XTSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩7,369.60
일시적 품절
- 2026년 3월 09일 부터 20 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 740 | ₩368.48 | ₩7,350.80 |
| 760 - 1480 | ₩359.08 | ₩7,181.60 |
| 1500 + | ₩353.44 | ₩7,050.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 170-2366
- 제조사 부품 번호:
- BFP842ESDH6327XTSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface Mount | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Emitter Base Voltage VEBO | 4.1V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 120mW | |
| Maximum Transition Frequency ft | 57GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP842ESD | |
| Height | 1.3mm | |
| Width | 1.25 mm | |
| Length | 2.1mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.25V | ||
Package Type SOT-343 | ||
Mount Type Surface Mount | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Emitter Base Voltage VEBO 4.1V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 120mW | ||
Maximum Transition Frequency ft 57GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP842ESD | ||
Height 1.3mm | ||
Width 1.25 mm | ||
Length 2.1mm | ||
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
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