Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- RS 제품 번호:
- 273-7299
- 제조사 부품 번호:
- BFP740ESDH6327XTSA1
- 제조업체:
- Infineon
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Subtotal (1 reel of 3000 units)*
₩1,043,400.00
일시적 품절
- 2026년 5월 26일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩347.80 | ₩1,041,708.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7299
- 제조사 부품 번호:
- BFP740ESDH6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Power Dissipation Pd | 160mW | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP740ESD | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Power Dissipation Pd 160mW | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP740ESD | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
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