Infineon BFR360FH6765XTSA1 RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS 제품 번호:
- 261-3954
- Distrelec 제품 번호:
- 304-41-646
- 제조사 부품 번호:
- BFR360FH6765XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 50 units)*
₩17,500.00
마지막 RS 재고
- 최종적인 8,800 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 50 | ₩350.00 | ₩17,520.00 |
| 100 - 100 | ₩316.00 | ₩15,780.00 |
| 150 - 200 | ₩284.00 | ₩14,200.00 |
| 250 - 450 | ₩256.00 | ₩12,760.00 |
| 500 + | ₩230.00 | ₩11,500.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-3954
- Distrelec 제품 번호:
- 304-41-646
- 제조사 부품 번호:
- BFR360FH6765XTSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 14GHz | |
| Minimum DC Current Gain hFE | 90 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 210mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Width | 1.2mm | |
| Length | 1.2mm | |
| Height | 0.55mm | |
| Series | BFR | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 14GHz | ||
Minimum DC Current Gain hFE 90 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 210mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Width 1.2mm | ||
Length 1.2mm | ||
Height 0.55mm | ||
Series BFR | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
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