Infineon BFR340FH6327XTSA1 RF Bipolar Transistor, 20 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS 제품 번호:
- 261-3952
- Distrelec 제품 번호:
- 304-41-645
- 제조사 부품 번호:
- BFR340FH6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩9,870.00
재고있음
- 7,200 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 50 | ₩197.40 | ₩9,907.60 |
| 100 - 100 | ₩178.60 | ₩8,930.00 |
| 150 - 200 | ₩159.80 | ₩8,027.60 |
| 250 - 450 | ₩144.76 | ₩7,238.00 |
| 500 + | ₩129.72 | ₩6,486.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-3952
- Distrelec 제품 번호:
- 304-41-645
- 제조사 부품 번호:
- BFR340FH6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Operating Temperature | 110°C | |
| Pin Count | 3 | |
| Height | 0.55mm | |
| Width | 1.2 mm | |
| Length | 1.2mm | |
| Series | BFR | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Operating Temperature 110°C | ||
Pin Count 3 | ||
Height 0.55mm | ||
Width 1.2 mm | ||
Length 1.2mm | ||
Series BFR | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineons established third generation RF bipolar transistor family. Its low current and high breakdown voltage characteristics make the device suitable for oscillators applications for frequencies as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
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