Infineon RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS 제품 번호:
- 261-3953
- 제조사 부품 번호:
- BFR360FH6765XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
₩756,000.00
마지막 RS 재고
- 최종적인 6,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩252.00 | ₩757,200.00 |
| 6000 - 6000 | ₩244.00 | ₩734,400.00 |
| 9000 + | ₩238.00 | ₩712,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-3953
- 제조사 부품 번호:
- BFR360FH6765XTSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Power Dissipation Pd | 210mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 1.2mm | |
| Height | 0.55mm | |
| Standards/Approvals | RoHS | |
| Series | BFR | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Power Dissipation Pd 210mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 1.2mm | ||
Height 0.55mm | ||
Standards/Approvals RoHS | ||
Series BFR | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
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