Infineon BFP196WH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343
- RS 제품 번호:
- 259-1417
- Distrelec 제품 번호:
- 304-40-484
- 제조사 부품 번호:
- BFP196WH6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 25 units)*
₩8,823.75
마지막 RS 재고
- 최종적인 75 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 25 | ₩352.95 | ₩8,814.00 |
| 50 - 75 | ₩335.40 | ₩8,385.00 |
| 100 - 225 | ₩315.90 | ₩7,878.00 |
| 250 - 975 | ₩292.50 | ₩7,332.00 |
| 1000 + | ₩269.10 | ₩6,727.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 259-1417
- Distrelec 제품 번호:
- 304-40-484
- 제조사 부품 번호:
- BFP196WH6327XTSA1
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -60°C | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Series | BFP196W | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -60°C | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Transition Frequency ft 7.5GHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Series BFP196W | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.
Power amplifier for DECT and PCN systems
Pb-free (RoHS compliant) package
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