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Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343

RS 제품 번호:: 259-1448
제조사 부품 번호:: BFP740FESDH6327XTSA1
제조업체:: Infineon

Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343

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RS 제품 번호:: 259-1448
제조사 부품 번호:: BFP740FESDH6327XTSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	RF Bipolar Transistor
	Maximum DC Collector Current Idc	45mA
	Maximum Collector Emitter Voltage Vceo	13V
	Package Type	SOT-343
	Mount Type	Surface
	Transistor Configuration	NPN
	Maximum Collector Base Voltage VCBO	13V
	Transistor Polarity	NPN
	Maximum Power Dissipation Pd	160mW
	Maximum Emitter Base Voltage VEBO	1.2V
	Minimum DC Current Gain hFE	160
	Maximum Transition Frequency ft	44GHz
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Pin Count	4
	Width	0.8 mm
	Height	0.55mm
	Series	BFP
	Standards/Approvals	RoHS
	Length	1.4mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type RF Bipolar Transistor
	Maximum DC Collector Current Idc 45mA
	Maximum Collector Emitter Voltage Vceo 13V
	Package Type SOT-343
	Mount Type Surface
	Transistor Configuration NPN
	Maximum Collector Base Voltage VCBO 13V
	Transistor Polarity NPN
	Maximum Power Dissipation Pd 160mW
	Maximum Emitter Base Voltage VEBO 1.2V
	Minimum DC Current Gain hFE 160
	Maximum Transition Frequency ft 44GHz
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Pin Count 4
	Width 0.8 mm
	Height 0.55mm
	Series BFP
	Standards/Approvals RoHS
	Length 1.4mm
	Automotive Standard No

Datasheet - BFP740H6327XTSA1

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.

Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA

High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA

OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA

Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343

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