제조사부품번호

Infineon RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343

RS 제품 번호:: 259-1416
제조사 부품 번호:: BFP196WH6327XTSA1
제조업체:: Infineon

Infineon RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343

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RS 제품 번호:: 259-1416
제조사 부품 번호:: BFP196WH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	RF Bipolar Transistor
	Maximum DC Collector Current Idc	150mA
	Maximum Collector Emitter Voltage Vceo	20V
	Package Type	SOT-343
	Mount Type	Surface
	Transistor Configuration	NPN
	Maximum Collector Base Voltage VCBO	20V
	Maximum Emitter Base Voltage VEBO	2V
	Minimum DC Current Gain hFE	70
	Transistor Polarity	NPN
	Maximum Power Dissipation Pd	700mW
	Minimum Operating Temperature	-60°C
	Maximum Transition Frequency ft	7.5GHz
	Maximum Operating Temperature	150°C
	Pin Count	4
	Height	0.9mm
	Standards/Approvals	RoHS
	Series	BFP196W
	Length	2.1mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type RF Bipolar Transistor
	Maximum DC Collector Current Idc 150mA
	Maximum Collector Emitter Voltage Vceo 20V
	Package Type SOT-343
	Mount Type Surface
	Transistor Configuration NPN
	Maximum Collector Base Voltage VCBO 20V
	Maximum Emitter Base Voltage VEBO 2V
	Minimum DC Current Gain hFE 70
	Transistor Polarity NPN
	Maximum Power Dissipation Pd 700mW
	Minimum Operating Temperature -60°C
	Maximum Transition Frequency ft 7.5GHz
	Maximum Operating Temperature 150°C
	Pin Count 4
	Height 0.9mm
	Standards/Approvals RoHS
	Series BFP196W
	Length 2.1mm
	Automotive Standard AEC-Q101

Datasheet - BFP196WH6327XTSA1

The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.

Power amplifier for DECT and PCN systems

Pb-free (RoHS compliant) package

Infineon RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343

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