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Winbond W949D2DBJX5I Mobile LPDDR SDRAM 512 MB Surface, 90-Pin 32 bit VFBGA

RS 제품 번호:: 188-2651
제조사 부품 번호:: W949D2DBJX5I
제조업체:: Winbond

Winbond W949D2DBJX5I Mobile LPDDR SDRAM 512 MB Surface, 90-Pin 32 bit VFBGA

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RS 제품 번호:: 188-2651
제조사 부품 번호:: W949D2DBJX5I
제조업체:: Winbond

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모두 선택	제품 정보	값
	브랜드	Winbond
	Memory Size	512MB
	Product Type	Mobile LPDDR SDRAM
	Organisation	64M x 8 Bit
	Data Bus Width	32bit
	Address Bus Width	15bit
	Number of Bits per Word	8
	Maximum Clock Frequency	200MHz
	Maximum Random Access Time	5ns
	Number of Words	64M
	Mount Type	Surface
	Package Type	VFBGA
	Minimum Operating Temperature	-40°C
	Pin Count	90
	Maximum Operating Temperature	85°C
	Standards/Approvals	LVCMOS Compatible
	Series	W949D2DB
	Length	13.1mm
	Height	0.65mm
	Width	8.1 mm
	Maximum Supply Voltage	1.95V
	Minimum Supply Voltage	1.7V
	Automotive Standard	No

	모두 선택
	브랜드 Winbond
	Memory Size 512MB
	Product Type Mobile LPDDR SDRAM
	Organisation 64M x 8 Bit
	Data Bus Width 32bit
	Address Bus Width 15bit
	Number of Bits per Word 8
	Maximum Clock Frequency 200MHz
	Maximum Random Access Time 5ns
	Number of Words 64M
	Mount Type Surface
	Package Type VFBGA
	Minimum Operating Temperature -40°C
	Pin Count 90
	Maximum Operating Temperature 85°C
	Standards/Approvals LVCMOS Compatible
	Series W949D2DB
	Length 13.1mm
	Height 0.65mm
	Width 8.1 mm
	Maximum Supply Voltage 1.95V
	Minimum Supply Voltage 1.7V
	Automotive Standard No

Datasheet W949D2DBJX5I

VDD = 1.7∼1.95V

VDDQ = 1.7∼1.95V

Data width: x16 / x32

Clock rate: 200MHz (-5),166MHz (-6)

Standard Self Refresh Mode

Partial Array Self-Refresh(PASR)

Auto Temperature Compensated Self Refresh (ATCSR)

Power Down Mode

Deep Power Down Mode (DPD Mode)

Programmable output buffer driver strength

Four internal banks for concurrent operation

Data mask (DM) for write data

Clock Stop capability during idle periods

Auto Pre-charge option for each burst access

Double data rate for data output

Differential clock inputs (CK and CK)

Bidirectional, data strobe (DQS)

CAS Latency: 2 and 3

Burst Length: 2, 4, 8 and 16

Burst Type: Sequential or Interleave

8K refresh cycles/64 mS

Interface: LVCMOS compatible

Support package:

60 balls VFBGA (x16)

90 balls VFBGA (x32)

Operating Temperature Range

Extended: -25°C ≤ TCASE ≤ 85°C

Industrial: -40°C ≤ TCASE ≤ 85°C

This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.

Burst Type: Sequential or Interleave

Standard Self Refresh Mode

PASR, ATCSR, Power Down Mode、DPD

Programmable output buffer driver strength

Four internal banks for concurrent operation

Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

Winbond W949D2DBJX5I Mobile LPDDR SDRAM 512 MB Surface, 90-Pin 32 bit VFBGA

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