Winbond Mobile LPDDR SDRAM 512 MB Surface, 90-Pin 32 bit VFBGA

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RS 제품 번호:
188-2577
제조사 부품 번호:
W949D2DBJX5I
제조업체:
Winbond
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브랜드

Winbond

Product Type

Mobile LPDDR SDRAM

Memory Size

512MB

Organisation

64M x 8 Bit

Data Bus Width

32bit

Address Bus Width

15bit

Number of Bits per Word

8

Maximum Clock Frequency

200MHz

Maximum Random Access Time

5ns

Number of Words

64M

Mount Type

Surface

Package Type

VFBGA

Minimum Operating Temperature

-40°C

Pin Count

90

Maximum Operating Temperature

85°C

Width

8.1 mm

Height

0.65mm

Standards/Approvals

LVCMOS Compatible

Series

W949D2DB

Length

13.1mm

Automotive Standard

No

Maximum Supply Voltage

1.95V

Minimum Supply Voltage

1.7V

VDD = 1.7∼1.95V

VDDQ = 1.7∼1.95V

Data width: x16 / x32

Clock rate: 200MHz (-5),166MHz (-6)

Standard Self Refresh Mode

Partial Array Self-Refresh(PASR)

Auto Temperature Compensated Self Refresh (ATCSR)

Power Down Mode

Deep Power Down Mode (DPD Mode)

Programmable output buffer driver strength

Four internal banks for concurrent operation

Data mask (DM) for write data

Clock Stop capability during idle periods

Auto Pre-charge option for each burst access

Double data rate for data output

Differential clock inputs (CK and CK)

Bidirectional, data strobe (DQS)

CAS Latency: 2 and 3

Burst Length: 2, 4, 8 and 16

Burst Type: Sequential or Interleave

8K refresh cycles/64 mS

Interface: LVCMOS compatible

Support package:

60 balls VFBGA (x16)

90 balls VFBGA (x32)

Operating Temperature Range

Extended: -25°C ≤ TCASE ≤ 85°C

Industrial: -40°C ≤ TCASE ≤ 85°C

This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.

Burst Type: Sequential or Interleave

Standard Self Refresh Mode

PASR, ATCSR, Power Down Mode、DPD

Programmable output buffer driver strength

Four internal banks for concurrent operation

Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

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