STMicroelectronics 650 V 210 A Diode Schottky 5-Pin PowerFLAT STPSC10065DLF
- RS 제품 번호:
- 201-4517
- 제조사 부품 번호:
- STPSC10065DLF
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩29,704.00
마지막 RS 재고
- 최종적인 10 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 745 | ₩5,940.80 | ₩29,704.00 |
| 750 - 1495 | ₩5,790.40 | ₩28,952.00 |
| 1500 + | ₩5,700.16 | ₩28,500.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 201-4517
- 제조사 부품 번호:
- STPSC10065DLF
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | PowerFLAT | |
| Maximum Continuous Forward Current If | 210A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Peak Reverse Current Ir | 0.9mA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 210A | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Diameter | 0.5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type PowerFLAT | ||
Maximum Continuous Forward Current If 210A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Peak Reverse Current Ir 0.9mA | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 210A | ||
Maximum Operating Temperature 175°C | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Height 15.75mm | ||
Diameter 0.5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics is a 650 V, 10 A power Schottky silicon carbide diode. It is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.
High creepage package
No or negligible reverse recovery
Temperature independent switching behaviour
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