STMicroelectronics 650 V 8 A Diode 5-Pin PowerFLAT STPSC8H065DLF
- RS 제품 번호:
- 201-0880
- 제조사 부품 번호:
- STPSC8H065DLF
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩21,582.40
일시적 품절
- 2026년 6월 24일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 745 | ₩4,316.48 | ₩21,582.40 |
| 750 - 1495 | ₩4,226.24 | ₩21,131.20 |
| 1500 + | ₩4,098.40 | ₩20,492.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 201-0880
- 제조사 부품 번호:
- STPSC8H065DLF
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | PowerFLAT | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 65μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 800A | |
| Maximum Forward Voltage Vf | 1.95V | |
| Maximum Operating Temperature | 175°C | |
| Width | 7.9 mm | |
| Length | 7.9mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type PowerFLAT | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Pin Count 5 | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 65μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 800A | ||
Maximum Forward Voltage Vf 1.95V | ||
Maximum Operating Temperature 175°C | ||
Width 7.9 mm | ||
Length 7.9mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Less-than-1mm height package
High creepage package
No or negligible reverse recovery
Temperature independent switching behavior
High forward surge capability
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