STMicroelectronics 650 V 10 A Schottky Diode Schottky 2-Pin TO-220AC
- RS 제품 번호:
- 164-6967
- 제조사 부품 번호:
- STPSC10065D
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩190,162.00
일시적 품절
- 2026년 6월 29일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 200 | ₩3,803.24 | ₩190,162.00 |
| 250 + | ₩3,728.04 | ₩186,364.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 164-6967
- 제조사 부품 번호:
- STPSC10065D
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-220AC | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC10065 | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 48A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Peak Reverse Current Ir | 130μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Standards/Approvals | ECOPACK, UL94 V0 | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-220AC | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC10065 | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 48A | ||
Maximum Forward Voltage Vf 1.65V | ||
Peak Reverse Current Ir 130μA | ||
Maximum Operating Temperature 175°C | ||
Height 15.75mm | ||
Length 10.4mm | ||
Standards/Approvals ECOPACK, UL94 V0 | ||
Width 4.6 mm | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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