onsemi 650 V 11 A Diode Schottky 2-Pin TO-220
- RS 제품 번호:
- 194-5751
- 제조사 부품 번호:
- FFSP1065B
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩145,418.00
마지막 RS 재고
- 최종적인 750 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩2,908.36 | ₩145,380.40 |
| 100 - 150 | ₩2,844.44 | ₩142,203.20 |
| 200 + | ₩2,780.52 | ₩139,044.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 194-5751
- 제조사 부품 번호:
- FFSP1065B
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 11A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Peak Reverse Current Ir | 160μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 11A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Peak Reverse Current Ir 160μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 16.51mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Pb-Free, Halogen Free/BFR Free
175C
49 mJ
Applications
General Purpose
SMPS
Solar Inverter
UPS
Power Switching Circuit
관련된 링크들
- onsemi 650 V 11 A Diode Schottky 2-Pin TO-220 FFSP1065B
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin TO-220
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin TO-220 FFSP0665B
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin TO-220
- onsemi 650 V 30 A Diode Schottky 2-Pin TO-220
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin TO-220 FFSP0865B
- onsemi 650 V 22.5 A Diode Schottky 2-Pin TO-220
- onsemi 650 V 30 A Diode Schottky 2-Pin TO-220 FFSP3065B