onsemi 650 V 20 A Schottky Diode Schottky 3-Pin TO-220
- RS 제품 번호:
- 195-2627
- 제조사 부품 번호:
- FFSP2065BDN-F085
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩306,930.00
마지막 RS 재고
- 최종적인 450 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩6,138.60 | ₩306,969.00 |
| 100 - 150 | ₩6,006.00 | ₩300,300.00 |
| 200 + | ₩5,885.10 | ₩294,294.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-2627
- 제조사 부품 번호:
- FFSP2065BDN-F085
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | EliteSiC | |
| Diode Configuration | 2x Common Cathode Pair | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 9.4mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series EliteSiC | ||
Diode Configuration 2x Common Cathode Pair | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 9.4mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-220-3L Silicon Carbide Schottky Diode, 650 V, 20 A
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR FreeApplications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
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