onsemi 650 V 30 A Diode Schottky 2-Pin TO-220
- RS 제품 번호:
- 194-5756
- 제조사 부품 번호:
- FFSP3065B
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩288,674.00
재고있음
- 추가로 2026년 3월 30일 부터 250 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩5,773.48 | ₩288,674.00 |
| 100 - 150 | ₩5,647.52 | ₩282,413.60 |
| 200 + | ₩5,534.72 | ₩276,754.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 194-5756
- 제조사 부품 번호:
- FFSP3065B
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.1kA | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Height 16.51mm | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide Schottky Diode 650V 30A TO220 Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Pb-Free, Halogen Free/BFR Free
175 C
144 mJ
Applications
General Purpose
SMPS
Solar Inverter
UPS
Power Switching Circuit
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