BGA855N6E6327XTSA1 Infineon RF Amplifier Low Noise 17.8 dB, 6-Pin 1300 MHz TSNP
- RS 제품 번호:
- 258-0668
- 제조사 부품 번호:
- BGA855N6E6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩4,624.80
재고있음
- 11,940 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩924.96 | ₩4,624.80 |
| 10 - 95 | ₩812.16 | ₩4,060.80 |
| 100 - 245 | ₩752.00 | ₩3,760.00 |
| 250 - 495 | ₩635.44 | ₩3,177.20 |
| 500 + | ₩575.28 | ₩2,876.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-0668
- 제조사 부품 번호:
- BGA855N6E6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Operating Frequency | 1300 MHz | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Technology | Silicon Germanium | |
| Gain | 17.8dB | |
| Minimum Supply Voltage | 1.1V | |
| Package Type | TSNP | |
| Maximum Supply Voltage | 3.3V | |
| Pin Count | 6 | |
| P1dB - Compression Point | 60mW | |
| Noise Figure | 1.1dB | |
| Third Order Intercept OIP3 | 0dBm | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Series | BGA855N6 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Operating Frequency 1300 MHz | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Technology Silicon Germanium | ||
Gain 17.8dB | ||
Minimum Supply Voltage 1.1V | ||
Package Type TSNP | ||
Maximum Supply Voltage 3.3V | ||
Pin Count 6 | ||
P1dB - Compression Point 60mW | ||
Noise Figure 1.1dB | ||
Third Order Intercept OIP3 0dBm | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Series BGA855N6 | ||
The Infineon low noise amplifier is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations.
High linearity performance IIP3 of 0 dBm
Low current consumption of 4.8 mA
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Only one external matching component needed
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