BGA125N6E6327XTSA1 Infineon RF Amplifier Low Noise 22.2 dB, 6-Pin 1300MHz TSNP

RS 제품 번호:: 228-6514
제조사 부품 번호:: BGA125N6E6327XTSA1
제조업체:: Infineon

BGA125N6E6327XTSA1 Infineon RF Amplifier Low Noise 22.2 dB, 6-Pin 1300MHz TSNP

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Subtotal (20 units, in packs of 20)*

₩11,040.00

일시적 품절

2026년 12월 09일 부터 배송

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수량	한팩당	한팩당*
20 - 20	₩552.00	₩11,040.00
40 - 80	₩542.00	₩10,840.00
100 - 220	₩532.00	₩10,620.00
240 - 480	₩522.00	₩10,440.00
500 +	₩512.00	₩10,260.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-6514
제조사 부품 번호:: BGA125N6E6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Amplifier Type	Low Noise
	Product Type	RF Amplifier
	Technology	Infineon Patented Bipolar Technology
	Gain	22.2dB
	Mount Type	Surface
	Package Type	TSNP
	Minimum Supply Voltage	1.1V
	Maximum Supply Voltage	2.8V
	Pin Count	6
	Third Order Intercept OIP3	14dBm
	Noise Figure	0.8dB
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Height	0.375mm
	Standards/Approvals	RoHS/WEEE
	Length	1.1mm
	Series	BGA125N6
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Amplifier Type Low Noise
	Product Type RF Amplifier
	Technology Infineon Patented Bipolar Technology
	Gain 22.2dB
	Mount Type Surface
	Package Type TSNP
	Minimum Supply Voltage 1.1V
	Maximum Supply Voltage 2.8V
	Pin Count 6
	Third Order Intercept OIP3 14dBm
	Noise Figure 0.8dB
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Height 0.375mm
	Standards/Approvals RoHS/WEEE
	Length 1.1mm
	Series BGA125N6
	Automotive Standard No

Datasheet-BGA125N6E6327XTSA1

Infineon BGA125N6 Series RF Amplifier, 22.2dB Gain, 0.8dB Noise Figure - BGA125N6E6327XTSA1

This RF amplifier is a Compact low-noise amplifying device designed for small-footprint surface-mount applications operating around 1300 MHz. It provides signal amplification with low noise contribution and supports low-voltage supply environments, making it appropriate for systems where board space and power headroom are constrained.

Features and Benefits:

• 22.2 dB gain improves weak signal levels for downstream processing
• 0.8 dB noise figure preserves signal-to-noise ratio in receivers
• 14 dBm OIP3 maintains linearity under moderate input drive
• 1.1-2.8 V supply range enables low-voltage system integration
• Infineon-patented bipolar topology delivers predictable RF behaviour
• Surface-mount TSNP package supports automated assembly

Applications

• Suitable for front-end amplification in 1300 MHz receiver chains
• Ideal for low-power wireless infrastructure modules
• Used with tuning networks in Compact RF modules
• Can be used for signal boost in test and measurement fixtures
• Applicable in battery-powered RF sensor nodes

What thermal limits should be considered during layout?

The device operates up to a maximum temperature of 85 °C, so thermal vias and adequate copper should be provided to manage dissipation.

What supply pinning flexibility exists for low-voltage designs?

It accepts supply voltages down to 1.1 V, allowing use with single-cell regulator rails common in portable systems.

How many package connections are available for PCB routing?

The component uses a 6-pin layout which permits separate RF, bias and ground routing for optimised performance.

What frequency performance can I expect for narrowband designs?

It is specified for operation at 1300 MHz, providing intended gain and noise characteristics at that frequency.

Are automotive standards applicable for use in vehicle systems?

It is not qualified to automotive standards and should not be assumed to meet vehicle-specific requirements.