IXYS Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247 IXFH46N65X2
- RS 제품 번호:
- 917-1413
- Distrelec 제품 번호:
- 302-53-326
- 제조사 부품 번호:
- IXFH46N65X2
- 제조업체:
- IXYS
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Subtotal (1 unit)*
₩10,885.20
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- 추가로 2025년 12월 29일 부터 107 개 단위 배송
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|---|---|
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 917-1413
- Distrelec 제품 번호:
- 302-53-326
- 제조사 부품 번호:
- IXFH46N65X2
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 69mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 660W | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 21.34 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253326 | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 69mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 660W | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 21.34 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253326 | ||
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247
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- IXYS Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247
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- IXYS Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin TO-247 IXFH110N10P