제조사부품번호

IXYS Type N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247 IXFH70N20Q3

RS 제품 번호:: 801-1392
제조사 부품 번호:: IXFH70N20Q3
제조업체:: IXYS

IXYS Type N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247 IXFH70N20Q3

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Subtotal (1 unit)*

₩21,770.40

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358 개 단위 배송 준비 완료

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RS 제품 번호:: 801-1392
제조사 부품 번호:: IXFH70N20Q3
제조업체:: IXYS

참조 문서

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모두 선택	제품 정보	값
	브랜드	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Maximum Power Dissipation Pd	690W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	67nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	16.26mm
	Height	16.26mm
	Width	5.3 mm
	Automotive Standard	No

	모두 선택
	브랜드 IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Maximum Power Dissipation Pd 690W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 67nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 16.26mm
	Height 16.26mm
	Width 5.3 mm
	Automotive Standard No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS

A wide range of Advanced discrete Power MOSFET devices from IXYS

IXYS Type N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247 IXFH70N20Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

MOSFET Transistors, IXYS

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