IXYS Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247 IXFH30N50Q3
- RS 제품 번호:
- 801-1386
- Distrelec 제품 번호:
- 302-53-319
- 제조사 부품 번호:
- IXFH30N50Q3
- 제조업체:
- IXYS
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Subtotal (1 unit)*
₩19,946.80
재고있음
- 282 개 단위 배송 준비 완료
- 추가로 2026년 1월 01일 부터 258 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩19,946.80 |
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| 15 + | ₩19,157.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 801-1386
- Distrelec 제품 번호:
- 302-53-319
- 제조사 부품 번호:
- IXFH30N50Q3
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 690W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Width | 5.3 mm | |
| Height | 16.26mm | |
| Distrelec Product Id | 30253319 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 690W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Width 5.3 mm | ||
Height 16.26mm | ||
Distrelec Product Id 30253319 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Type N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247 IXFH70N20Q3
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- IXYS Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET, 88 A, 300 V Enhancement, 3-Pin TO-247 IXFH88N30P
- IXYS Type N-Channel MOSFET, 69 A, 300 V Enhancement, 3-Pin TO-247 IXFH69N30P
- IXYS Type N-Channel MOSFET, 94 A, 300 V Enhancement, 3-Pin TO-247 IXFH94N30P3
- IXYS HiperFET, Q-Class N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3
- IXYS HiperFET, Q3-Class N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3