제조사부품번호

Wolfspeed C3M Type N-Channel MOSFET, 36 A, 900 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 162-9712
제조사 부품 번호:: C3M0065090D
제조업체:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 36 A, 900 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩633,315.60

일시적 품절

2026년 1월 07일 부터 60 개 단위 배송

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수량	한팩당	Per Tube*
30 - 30	₩21,110.52	₩633,332.52
60 - 90	₩20,476.96	₩614,325.72
120 +	₩19,864.08	₩595,905.48

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 162-9712
제조사 부품 번호:: C3M0065090D
제조업체:: Wolfspeed

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	900V
	Package Type	TO-247
	Series	C3M
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	78mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	30.4nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	18 V
	Forward Voltage Vf	4.4V
	Maximum Operating Temperature	150°C
	Width	21.1 mm
	Length	16.13mm
	Standards/Approvals	No
	Height	5.21mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 900V
	Package Type TO-247
	Series C3M
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 78mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 30.4nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 18 V
	Forward Voltage Vf 4.4V
	Maximum Operating Temperature 150°C
	Width 21.1 mm
	Length 16.13mm
	Standards/Approvals No
	Height 5.21mm
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed C3M Type N-Channel MOSFET, 36 A, 900 V Enhancement, 3-Pin TO-247

Wolfspeed Silicon Carbide Power MOSFETs

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