제조사부품번호

Wolfspeed C3M Type N-Channel MOSFET, 23 A, 900 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 145-7049
제조사 부품 번호:: C3M0120090D
제조업체:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 23 A, 900 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩419,221.20

재고있음

60 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩13,974.04	₩419,204.28
60 - 90	₩13,554.80	₩406,627.08
120 +	₩13,282.20	₩398,482.92

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 145-7049
제조사 부품 번호:: C3M0120090D
제조업체:: Wolfspeed

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	900V
	Series	C3M
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	155mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	18 V
	Maximum Power Dissipation Pd	97W
	Forward Voltage Vf	4.4V
	Typical Gate Charge Qg @ Vgs	17.3nC
	Maximum Operating Temperature	150°C
	Width	21.1 mm
	Height	5.21mm
	Standards/Approvals	No
	Length	16.13mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 900V
	Series C3M
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 155mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 18 V
	Maximum Power Dissipation Pd 97W
	Forward Voltage Vf 4.4V
	Typical Gate Charge Qg @ Vgs 17.3nC
	Maximum Operating Temperature 150°C
	Width 21.1 mm
	Height 5.21mm
	Standards/Approvals No
	Length 16.13mm
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed C3M Type N-Channel MOSFET, 23 A, 900 V Enhancement, 3-Pin TO-247

Wolfspeed Silicon Carbide Power MOSFETs

MOSFET Transistors, Wolfspeed

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