Infineon HEXFET P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 IRLML6401TRPBF

RS 제품 번호:: 301-316
제조사 부품 번호:: IRLML6401TRPBF
제조업체:: Infineon

Infineon HEXFET P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 IRLML6401TRPBF

가격 개당가격(5개가 1팩안에)**

₩432.40

780 재고있음 5-9영업일내 홍콩 발송*

* 배송 날짜는 선택한 수량과 배송 주소에 따라 달라질 수 있습니다.

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수량	한팩당	한팩당**
5 +	₩432.40	₩2,162.00

** 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 301-316
제조사 부품 번호:: IRLML6401TRPBF
제조업체:: Infineon

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF

This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.

Features & Benefits

• Advanced processing for very low on-resistance
• Maximum drain source voltage of 12V
• Continuous drain current capability of 4.3A
• Junction temperature tolerance up to 150°C
• Optimised for fast switching applications, enhancing efficiency
• Compact SOT-23 package for space-efficient circuit designs

Applications

• Battery and load management systems
• Portable electronics where low-profile components are required
• Power management solutions in PCMCIA cards
• Automation systems that require dependable switching
• Electronic circuits needing a compact surface mount design

What is the impact of higher temperatures on performance?

Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.

Is this product suited for fast-switching applications?

Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.

What precautions should be taken during installation?

It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

속성	값
Channel Type	P
Maximum Continuous Drain Current	4.3 A
Maximum Drain Source Voltage	12 V
Series	HEXFET
Package Type	Micro
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	50 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.95V
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Typical Gate Charge @ Vgs	10 nC @ 5 V
Transistor Material	Si
Number of Elements per Chip	1
Width	1.4mm
Maximum Operating Temperature	+150 °C
Length	3.04mm
Height	1.02mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V