Infineon HEXFET N-Channel MOSFET, 9.3 A, 80 V Enhancement, 8-Pin SOIC IRF7493TRPBF

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Subtotal (1 pack of 10 units)*

₩22,500.00

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10 - 990₩2,250.00₩22,500.00
1000 - 1990₩2,192.00₩21,920.00
2000 +₩2,156.00₩21,560.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
915-4960
제조사 부품 번호:
IRF7493TRPBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.3A

Maximum Drain Source Voltage Vds

80V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

35nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

150°C

Height

1.5mm

Length

5mm

Width

4mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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