Infineon HEXFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC IRF7855TRPBF

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₩18,367.60

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10 +₩1,836.76₩18,367.60

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포장 옵션
RS 제품 번호:
827-3893
제조사 부품 번호:
IRF7855TRPBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4 mm

Length

5mm

Standards/Approvals

No

Height

1.5mm

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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