Infineon HEXFET Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF

RS 제품 번호:: 827-3896
제조사 부품 번호:: IRF7832TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 10 units)*

₩17,020.00

일시적 품절

2026년 8월 25일 부터 1,550 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 990	₩1,702.00	₩17,020.00
1000 - 1990	₩1,662.00	₩16,620.00
2000 +	₩1,636.00	₩16,360.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 827-3896
제조사 부품 번호:: IRF7832TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	34nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	155°C
	Length	5mm
	Height	1.5mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 34nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 155°C
	Length 5mm
	Height 1.5mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 20A Maximum Continuous Drain Current - IRF7832TRPBF

This MOSFET is a surface-mount N-channel enhancement device designed for power switching and control in compact electronic systems. It operates across a wide temperature range suitable for industrial environments and integrates into standard SOIC footprints for PCB assembly, offering a balance of current capability and manageable power dissipation for medium-power designs.

Features and Benefits:

• Very low on-resistance 4.8 mΩ enabling reduced conduction losses
• 20A continuous drain current supporting high-current loads
• 30V drain-source rating for common low-voltage power rails
• 34 nC typical gate charge for faster switching transitions
• 2.5W maximum power dissipation for sustained thermal handling
• ±20V gate-source tolerance allowing flexible drive levels

Applications

• Suitable for DC-DC converter switching stages
• Ideal for motor driver power switches in compact designs
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution

What thermal extremes can it withstand in service?

The device is specified to function between -55 °C and 155 °C, enabling use in harsh industrial temperature conditions.

How many pins does the package present for PCB layout?

It comes in an 8-pin SOIC package which aids in standard footprint placement and thermal spreading.

What gate drive considerations arise from its gate charge?

With a typical gate charge of 34 nC, drivers must supply sufficient peak current to achieve the desired switching speed without excessive drive losses.

How does its forward voltage affect series conduction scenarios?

The measured forward voltage of 1V affects the drop across intrinsic diode events and should be considered when designing for reverse recovery or body-diode conduction.