Infineon SIPMOS Type P-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin SOT-223

RS 제품 번호:: 165-5812
제조사 부품 번호:: BSP322PH6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

₩632,000.00

일시적 품절

2026년 10월 27일 부터 배송

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수량	한팩당	릴당*
1000 - 4000	₩632.00	₩632,200.00
5000 +	₩614.00	₩613,400.00

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RS 제품 번호:: 165-5812
제조사 부품 번호:: BSP322PH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12.4nC
	Forward Voltage Vf	0.84V
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Length	6.5mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12.4nC
	Forward Voltage Vf 0.84V
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Length 6.5mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon SIPMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP322PH6327XTSA1

This MOSFET is a P-channel enhancement device designed for surface-mounted power switching in demanding environments. It operates across a wide temperature span and is suited to high-voltage P-channel switching tasks where a compact package form and automotive-grade robustness are required.

Features and Benefits:

• 100V drain rating enables high-voltage switching capability
• 800mΩ Rds(on) minimises conduction losses under load
• 1A continuous drain current supports low-to-moderate currents
• 1.8W maximum dissipation allows stable power handling
• 12.4nC typical gate charge yields predictable gate-drive demands
• 20V maximum gate-source voltage maintains safe drive margin

Applications

• Suitable for load switching in automotive electronic modules
• Ideal for high-voltage polarity-protection circuits
• Used for power management in battery-operated systems
• Can be used for reverse-current prevention in DC rails
• Suitable for compact surface-mount power-conversion stages

What temperature range can it tolerate in the field?

It is specified to operate from -55°C up to 150°C, making it appropriate for harsh thermal environments.

How many pins and mounting style should designers expect?

The device has four pins and is intended for surface-mount assembly in a SOT-223 footprint.

What electrical characteristic determines switching-speed requirements?

The gate charge of 12.4nC indicates the charge required at the gate and informs selection of gate drivers and drive timing.

Which mechanical envelope dimensions matter for layout planning?

The component measures 6.5 x 3.5 x 1.6mm, which assists footprint and clearance considerations.