Infineon SIPMOS Type P-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

₩447,440.00

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  • 2026년 5월 25일 부터 배송
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1000 - 4000₩447.44₩448,380.00
5000 +₩434.28₩434,844.00

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RS 제품 번호:
165-5812
제조사 부품 번호:
BSP322PH6327XTSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.4nC

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.84V

Maximum Operating Temperature

150°C

Width

3.5 mm

Length

6.5mm

Height

1.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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