Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1

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포장 옵션
RS 제품 번호:
906-4407
제조사 부품 번호:
IPT007N06NATMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

60V

Package Type

HSOF

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

216nC

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Length

10.58mm

Standards/Approvals

No

Height

2.4mm

Automotive Standard

No

제외

Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IPT007N06NATMA1


This MOSFET is a high-current N-channel enhancement device designed for power switching in demanding electronic systems. It operates across a wide temperature range suitable for harsh environments and is supplied in a surface-mount HSOF package to support compact board layouts and efficient thermal management.

Features and Benefits:


• 60V drain rating enabling medium-voltage power designs
• 300A continuous current handling for heavy-load switching
• 1mΩ Rds(on) reducing conduction losses in high-current paths
• 375W power dissipation allowing sustained high-power operation
• 216nC typical gate charge for predictable gate-drive requirements
• ±20V gate tolerance supporting robust gate-drive transients

Applications


• Suitable for server and data centre power conversion stages
• Ideal for motor-drive inverter output stages
• Used for high-current synchronous rectification in PSUs
• Can be used for DC-DC converters in telecoms equipment
• Suitable for industrial power management and drives

What thermal limits should designers consider for continuous operation?


The device is rated to dissipate up to 375W

designers must ensure adequate PCB copper, thermal vias, or heatsinking to keep junction temperature within acceptable bounds given system power loss.

How does gate-charge impact drive circuitry selection?


With a typical gate charge of 216nC, gate drivers must supply sufficient peak current and switching speed to achieve desired transition times while managing switching losses and EMI.

What are the device’s mechanical mounting and pin-count details?


It is supplied in an HSOF surface-mount package with eight pins, enabling low-inductance board-level connections for high-current paths.

What operating temperature range can be expected in system design?


The component is specified to operate from -55°C up to 175°C, permitting use in thermally challenging environments when appropriate thermal design practices are applied.

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