제조사부품번호

Infineon OptiMOS Type N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

RS 제품 번호:: 130-0929
제조사 부품 번호:: IPT004N03LATMA1
제조업체:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩13,366.80

재고있음

8,072 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩6,683.40	₩13,366.80
10 - 98	₩6,570.60	₩13,141.20
100 - 498	₩6,401.40	₩12,802.80
500 - 998	₩6,241.60	₩12,483.20
1000 +	₩6,081.80	₩12,163.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 130-0929
제조사 부품 번호:: IPT004N03LATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	HSOF
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	500μΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	252nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	300W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	10.1mm
	Standards/Approvals	No
	Height	2.4mm
	Width	10.58 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type HSOF
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 500μΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 252nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 300W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 10.1mm
	Standards/Approvals No
	Height 2.4mm
	Width 10.58 mm
	Automotive Standard No

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS Type N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

Infineon OptiMOS™ Power MOSFET Family

MOSFET Transistors, Infineon

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