Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin TO-252 IRFR120NTRLPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩15,340.80

Add to Basket
수량 선택 또는 입력
마지막 RS 재고
  • 160 개 단위 배송 준비 완료
  • 2026년 1월 01일 부터 최종 360 개 단위 배송
수량
한팩당
한팩당*
20 - 740₩767.04₩15,322.00
760 - 3780₩752.00₩15,058.80
3800 +₩620.40₩12,389.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
827-4035
제조사 부품 번호:
IRFR120NTRLPBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

48W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

Lead-Free

Width

6.22 mm

Height

2.39mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

관련된 링크들