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Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2

RS 제품 번호:: 229-1819
제조사 부품 번호:: IPB120P04P4L03ATMA2
제조업체:: Infineon

Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2

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Subtotal (1 pack of 5 units)*

₩30,620.00

추가로 2026년 10월 05일 부터 605 개 단위 배송

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수량	한팩당	한팩당*
5 - 5	₩6,124.00	₩30,620.00
10 - 95	₩6,012.00	₩30,060.00
100 - 245	₩5,904.00	₩29,520.00
250 - 495	₩5,800.00	₩29,000.00
500 +	₩5,696.00	₩28,480.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 229-1819
제조사 부품 번호:: IPB120P04P4L03ATMA2
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16V
	Forward Voltage Vf	-1.3V
	Maximum Power Dissipation Pd	136W
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16V
	Forward Voltage Vf -1.3V
	Maximum Power Dissipation Pd 136W
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB120P04P4L03ATMA2

Infineon iPB Series MOSFET, 40V Maximum Drain Source Voltage, 120A Maximum Continuous Drain Current - IPB120P04P4L03ATMA2

This p-channel MOSFET is a surface-mount power transistor designed for high-current switching and thermal resilience in automotive and industrial environments. It operates across a wide temperature span and is intended for use where robust gate tolerance and low conduction loss are required.

Features and Benefits:

• 40V drain-source rating enables medium-voltage switching
• 120A continuous drain current supports heavy load handling
• 3.1mΩ low Rds(on) reduces conduction losses under load
• 136W power dissipation allows sustained power handling
• Vgs tolerance up to 16V permits higher gate drive margins
• -55°C to 175°C temperature range maintains operation in extremes

Applications

• Suitable for high-current reverse battery protection circuits
• Ideal for automotive power distribution modules
• Used with motor controller low-side or high-side
• Can be used for DC-DC converter synchronous switching
• Suitable for power-management functions in electric vehicles

What package does it use for PCB assembly?

It is supplied in a TO-263 surface-mount package designed for soldered board mounting.

How does it behave thermally under high load?

The device can dissipate up to 136W when properly cooled, allowing extended operation at elevated power with adequate thermal management.

What gate limits should be observed during design?

The gate-source voltage must not exceed 16V to avoid gate overstress.

Is it suitable for automotive qualification requirements?

It meets the AEC-Q101 automotive standard for semiconductor qualification.